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A subsidiary of Nordic Semiconductor, Mobile Semiconductor is a leader in SRAM, ROM, and Register File Memory Compilers.
Mobile Semi offers a wide range of products to suit your specific needs.
With over 14 Years Experience, Mobile Semi Drives Rad Hard by Design (RHBD).
Nordic Semiconductor is a Norwegian fabless semiconductor company specializing in wireless communication technology that powers the Internet of Things (IoT). Nordic was established in 1983 and has about 1450 employees across the globe. Their award-winning Bluetooth Low Energy solutions pioneered ultra-low power wireless, making us the global market leader. Their technology range was later supplemented by ANT+, Thread and Zigbee, and in 2018 they launched their low power, compact LTE-M/NB-IoT cellular IoT solutions to extend the penetration of the IoT. The Nordic portfolio was further complemented by Wi-Fi technology in 2021.
They built their market reputation by supplying leading-edge wireless technologies supported by development tools that shield the designer from RF complexity, allowing anyone with a bright idea to build innovations based on the IoT platform. Today, their award-winning, high-performance, yet easy to design-in, Bluetooth LE solutions are used by the world’s leading brands in a variety of products, including wireless PC peripherals, gaming, sports and fitness, mobile phone accessories, consumer electronics, toys, healthcare and automation. Nordic is a member of the ANT+ Alliance, Bluetooth SIG, Thread Group, Connectivity Standards Alliance, Wi-Fi Alliance, and GSMA.
Nordic Semiconductor acquired Mobile Semiconductor in 2022, adding our market-proven track record of delivering ultra-low power-performance-optimized, leading-edge static RAM (SRAM) memory technology for various MCUs and SoCs to their already impressive portfolio of products.
Mobile Semiconductor’s embedded SRAM technology offers optimized memory solutions for GlobalFoundriesᵀᴹ 22nm FDSOI processes. These single-port SRAM and Register File solutions are available in a range of architectures:
Ultra Low Power (ULP) memories use low VT and standard VT devices to optimize the critical path and enhance performance while limiting static current. (SRAM only)
Ultra Low Leakage (ULL) memories use extreme high Vt devices, proprietary bias techniques, and the lowest leakage bit cells available to achieve the lowest possible leakage currents.
Ultra Low voltage (ULV) SRAM use high VT devices to minimize leakage currents with limited standard VT devices used when required and a dedicated retention mode providing industry leading low standby currents. The low standby current of Mobile Semiconductor’s LV memories are ideal for the IoT market.
Common to All Products Mobile Semiconductor’s proprietary design and layout techniques are applied to all architectures to optimize performance while keeping die size small.
Mobile Semiconductor’s silicon-proven embedded SRAM technology offers optimized memory solutions for 22 nm BULK Ultra Low Leakage. These single-port SRAM, via programmable ROM, Single Port and Dual Port Register File solutions are available in a range of architectures:
Single Port SRAM – Low power retention mode and options for column repair or high speed with pins on side – use high VT devices to minimize leakage currents with limited standard VT devices used when required and a dedicated retention mode providing industry leading low standby currents. The low standby current of Mobile Semiconductor’s LV memories are ideal for the IoT market.
ROM – Via Programmable with differential bit cell
Single-port Register File – Low Power Retention Mode
Dual-port Register File (1R1W) – Low Power Retention Mode
Mobile Semiconductor’s silicon-proven embedded SRAM technology offers optimized memory solutions for the40nm low-power processes. These single-port SRAM solutions are available in a range of architectures:
Low voltage (LV) SRAMuse high VT devices to minimize leakage currents with limited standard VT devices used when required and a dedicated retention mode providing industry leading low standby currents. The low standby current of Mobile Semiconductor’s LV memories are ideal for the IoT market.
Single-port ultra-high speed (UHS) memories use low VT and standard VT devices to optimize the critical path and enhance performance while limiting static current.
Mobile Semiconductor’s proprietary design and layout techniques are applied to all architectures to optimize performance while keeping die size small.
Mobile Semiconductor’s 90nm Strategic radiation hardened Single Port SRAM and Dual Port SRAM memory compilers are built on a soft error resistant Fully Depleted SOI technology. Strategic radiation hardness is ensured using DICE bit cells. These compilers incorporate additional innovative Rad Hard by Design (RHBD) techniques including Triple Mode Redundancy (TMR), DICE latches, and Qcrit optimization to reduce SET and SEU, as well as bit separation to reduce multi-bit upset (MBU). Optional multi-bit error detection and single-bit error correction is available to reduce soft error rates even further.
SkyWater Technology Foundryᵀᴹ has added both memory compilers to their IP ecosystem to enable 90nm strategic rad-hard by process (RH90) solutions for microelectronic devices used in harsh environments.
For more information on SkyWater’s RH90 and Mobile Semiconductor’s SRAM compilers, please visit: Rad-Hard EAP – Skywater Technology
The Trailblaze™ Built-in Self Test (BIST) Compiler provides seamless integration to verify Mobile Semiconductor’s optimized memory solutions. The configurable Trailblaze™ BIST performs at-speed testing of Trailblaze™ generated embedded SRAMs.
Programmable March algorithms included in the Trailblaze™ BIST give extensive test coverage and diagnostic capabilities provide multiple options to isolate defects.
The Trailblaze™ BIST Compiler generates a synthesizable Verilog RTL IP module as well as a top-level Verilog module to instantiate both the Trailblaze™ BIST and the Mobile Semiconductor embedded SRAM instance. Synthesis scripts are provided for enhanced design flow support.
MSC BIST Supports the New IJTAG Standard
IJTAG, the short form for “Internal JTAG”, refers to the upcoming IEEE 1687 standard. The current official title of this new standard is the IEEE P1687 Standard for Access and Control of Instrumentation Embedded within a Semiconductor Device.
Mobile Semiconductor’s Trailblaze™ software delivers silicon-proven memory IP solutions that set the standard in high performance and low voltage embedded SRAMs.
Proven over multiple foundries with a range of technology nodes in its ability to rapidly generate memory Instances and supporting views, Trailblaze™ creates solutions for a broad application space.
Using standard foundry bit cells, Trailblaze™ is designed to create optimized memory architectures based on the designer’s requirements including:
Low voltage, ultra high speed and high density architectures
Multiple mux options per compiler to enable various aspect ratios
1-bit granularity on word widths to allow for block size optimizations
Bit Write with Global Write Enable
Byte Write
Column Redundancy and Repair
Mobile Semiconductor is the only memory compiler IP vendor delivering low voltage, ultra high speed, high density, multi-megabit and rad hard embedded SRAM solutions. Our customers differentiate their products by using our application-optimized SRAMs to meet their high performance and ultra-low power product requirements.
Mobile Semiconductor’s proven expertise includes low voltage and ultra high speed embedded SRAMs, radiation hardened SRAMs, and error correction (ECC) architectures. The innovative Trailblaze Software as been proven across multiple foundries and technology nodes, producing industry-leading reduced die sizes.
Our highly experienced management and technical teams develop optimized embedded SRAM compilers and instances along with extensive design flow support. Mobile Semiconductor has a proven track record in delivering best-in-class embedded memory solutions for a broad range of applications, market segments and industries.
Mobile Semiconductor’s custom solutions include:
Optimized, Embedded SRAM Solutions in the Following Architectures:
Low Voltage (LV)
Ultra High Speed (UHS)
Multi-Megabit (MM)
High Density (HD)
Radiation Hardened Optimized, Embedded SRAM Compilers
Read-Only Memory (ROM) Solutions
Single-Port Solutions
Dual-Port Solutions
Register File Solutions
Mobile Semiconductor’s optimized, embedded SRAMs also have the option to include the MSC BIST for seamless integration of verification.
Sequence in Test Chip Creation and Test
Test Chip Netlist created with:
BIST
Memory Instances
Timing Capture Logic
Test Chip Physical Implementation
Full Chip Integration
Memory Test Structures
Other IP Blocks as Needed
Test Chip Final Verification / Release to Foundry
Foundry Manufactures Silicon / Delivers Bare Die
Test Vector Generation
Packaging by Third Party
Silicon Test in House
Test Report Generation
Contact our team to learn how Mobile Semi can help you achieve your needs.